This photodiode detector has a UV-enhanced silicon photodiode with a 350μm active diameter and operates at a wavelength of 850nm.
Key specifications:
- Shunt resistance: 150MΩ (typ)
- Shunt capacitance: 1500pF (typ)
- Responsivity: 0.55A/W at 850nm
- NEP (Noise Equivalent Power): 3.0 x 10^14 WHz^-1/2 at 850nm
Applications:
These units are suitable for industrial control systems, gas analyzers, thermal sensors, and general infrared instrumentation.
Support and Accessories:
Electro Optical Systems offers accessories such as optical filters, integral preamplifiers, and infrared source assemblies to support these units.
Manual:
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Pricing & Distributors: https://www.datasheets360.com/part/detail/s-050/4087096966139253906/
