RENESAS HAT2139H Silicon N Channel Power MOS FET Power Switching
This datasheet describes the RENESAS HAT2139H, a silicon N-channel power MOS FET designed for power switching applications. Key Features: Capable of 7 V gate drive Low drive current High density mounting Low on-resistance (Rpston) of 9 mΩ typ. (at VGs = 10 V) Absolute Maximum Ratings The device has a maximum drain to source voltage […]
Silicon N Channel Power MOS FET High Speed Power Switching
Overview This datasheet describes the HAT2033RMHA and T2033RJ Silicon N Channel Power MOS FET, designed for high-speed power switching applications, particularly in the automotive industry. Key Features Low on-resistance, capable of 4 V gate drive, and high-density mounting in a SOP-8 package. Electrical Characteristics The device has a drain to source breakdown voltage of 60 […]